High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi; J. K. Sheu; C. H. Chen; G. R. Lin; W. C. Lai

doi:10.1109/LED.2007.914070

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped In_x Ga_1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

Original language	English
Pages (from-to)	158-160
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LED.2007.914070
State	Published - Feb 2008

Keywords

GaN
LED
Optical fiber

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10.1109/LED.2007.914070

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title = "High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures",

abstract = "We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).",

keywords = "GaN, LED, Optical fiber",

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T1 - High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

AU - Shi, J. W.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Lin, G. R.

AU - Lai, W. C.

PY - 2008/2

Y1 - 2008/2

N2 - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

AB - We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

KW - GaN

KW - LED

KW - Optical fiber

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M3 - 期刊論文

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SN - 0741-3106

VL - 29

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

Abstract

Keywords

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