High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes

R. H. Yuang, Y. J. Chien, J. L. Shieh, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The GaAs metal-semiconductor-metal photodetector (MSM-PD) with recessed metal electrodes have been fabricated and characterized. The recessed structure allows very short photocarrier sweep-out time because of both a strengthened electric field in the active region and a shortened distance for the photocarriers to reach the electrodes. Improved high-speed performance and enhanced peak amplitude in the temporal response can thus be obtained simultaneously. There is about a 60% and 50% improvement in the fall time and peak amplitude of the temporal response at 5 V bias over the conventional device, respectively. The measured results also show that high-speed operation can be achieved at a lower bias voltage for the GaAs MSM-PD with recessed metal electrodes as compared to the conventional one. Two-dimensional simulation was carried out to give an insight into the operation principle of this device.

Original languageEnglish
Pages (from-to)245-247
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number2
DOIs
StatePublished - 8 Jul 1996

Fingerprint

Dive into the research topics of 'High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes'. Together they form a unique fingerprint.

Cite this