High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

Zohauddin Ahmad; Rui Lin Chao; Yung Jr Hung; Jyehong Chen; Chia Chien Wei; Jin Wei Shi

doi:10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

Zohauddin Ahmad, Rui Lin Chao, Yung Jr Hung, Jyehong Chen, Chia Chien Wei, Jin Wei Shi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We demonstrate In_xAl_yGa_1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

Original language	English
Title of host publication	2019 IEEE Photonics Conference, IPC 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728106151
DOIs	https://doi.org/10.1109/IPCon.2019.8908442
State	Published - Sep 2019
Event	2019 IEEE Photonics Conference, IPC 2019 - San Antonio, United States Duration: 29 Sep 2019 → 3 Oct 2019

Publication series

Name	2019 IEEE Photonics Conference, IPC 2019 - Proceedings

Conference

Conference	2019 IEEE Photonics Conference, IPC 2019
Country/Territory	United States
City	San Antonio
Period	29/09/19 → 3/10/19

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10.1109/IPCon.2019.8908442

Cite this

Ahmad, Z., Chao, R. L., Hung, Y. J., Chen, J., Wei, C. C., & Shi, J. W. (2019). High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings Article 8908442 (2019 IEEE Photonics Conference, IPC 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2019.8908442

@inproceedings{5726fc713705417d961479bfddb1f0b3,

title = "High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique",

abstract = "We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.",

author = "Zohauddin Ahmad and Chao, {Rui Lin} and Hung, {Yung Jr} and Jyehong Chen and Wei, {Chia Chien} and Shi, {Jin Wei}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Photonics Conference, IPC 2019 ; Conference date: 29-09-2019 Through 03-10-2019",

year = "2019",

month = sep,

doi = "10.1109/IPCon.2019.8908442",

language = "???core.languages.en_GB???",

series = "2019 IEEE Photonics Conference, IPC 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE Photonics Conference, IPC 2019 - Proceedings",

}

Ahmad, Z, Chao, RL, Hung, YJ, Chen, J, Wei, CC & Shi, JW 2019, High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. in 2019 IEEE Photonics Conference, IPC 2019 - Proceedings., 8908442, 2019 IEEE Photonics Conference, IPC 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Photonics Conference, IPC 2019, San Antonio, United States, 29/09/19. https://doi.org/10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. / Ahmad, Zohauddin; Chao, Rui Lin; Hung, Yung Jr et al.
2019 IEEE Photonics Conference, IPC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8908442 (2019 IEEE Photonics Conference, IPC 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

AU - Ahmad, Zohauddin

AU - Chao, Rui Lin

AU - Hung, Yung Jr

AU - Chen, Jyehong

AU - Wei, Chia Chien

AU - Shi, Jin Wei

PY - 2019/9

Y1 - 2019/9

N2 - We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

AB - We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.

UR - http://www.scopus.com/inward/record.url?scp=85075898519&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2019.8908442

DO - 10.1109/IPCon.2019.8908442

M3 - 會議論文篇章

AN - SCOPUS:85075898519

T3 - 2019 IEEE Photonics Conference, IPC 2019 - Proceedings

BT - 2019 IEEE Photonics Conference, IPC 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Photonics Conference, IPC 2019

Y2 - 29 September 2019 through 3 October 2019

ER -

Ahmad Z, Chao RL, Hung YJ, Chen J, Wei CC, Shi JW. High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8908442. (2019 IEEE Photonics Conference, IPC 2019 - Proceedings). doi: 10.1109/IPCon.2019.8908442

High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

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