Abstract
Ultra-high speed and high saturation power performances of low-temperature-grown GaAs based MSM TW photodetectors was demonstrated in the telecommunication wavelength regime (∼1300 nm). A femtosecond Cr4+: forsterite laser operating at 1230 nm was employed, for minimization of telecommunication wavelength of 1300-1500 nm. 160 GHz electrical bandwidth with 3.55 V peak output voltage was obtained under 10 V bias and 28 pJ/pulse optical excitation energy.
| Original language | English |
|---|---|
| Pages | 10-11 |
| Number of pages | 2 |
| State | Published - 2002 |
| Event | Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
| Conference | Conference on Lasers and Electro-Optics (CLEO 2002) |
|---|---|
| Country/Territory | United States |
| City | Long Beach, CA |
| Period | 19/05/02 → 24/05/02 |
Fingerprint
Dive into the research topics of 'High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (∼1.3 μm)'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver