High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (∼1.3 μm)

Jin Wei Shi, Yen Hung Chen, Kian Giap Gan, Yi Jen Chiu, John E. Bowers, Chi Kuang Sun

Research output: Contribution to conferencePaperpeer-review

Abstract

Ultra-high speed and high saturation power performances of low-temperature-grown GaAs based MSM TW photodetectors was demonstrated in the telecommunication wavelength regime (∼1300 nm). A femtosecond Cr4+: forsterite laser operating at 1230 nm was employed, for minimization of telecommunication wavelength of 1300-1500 nm. 160 GHz electrical bandwidth with 3.55 V peak output voltage was obtained under 10 V bias and 28 pJ/pulse optical excitation energy.

Original languageEnglish
Pages10-11
Number of pages2
StatePublished - 2002
EventConference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States
Duration: 19 May 200224 May 2002

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO 2002)
Country/TerritoryUnited States
CityLong Beach, CA
Period19/05/0224/05/02

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