Ultra-high speed and high saturation power performances of low-temperature-grown GaAs based MSM TW photodetectors was demonstrated in the telecommunication wavelength regime (∼1300 nm). A femtosecond Cr4+: forsterite laser operating at 1230 nm was employed, for minimization of telecommunication wavelength of 1300-1500 nm. 160 GHz electrical bandwidth with 3.55 V peak output voltage was obtained under 10 V bias and 28 pJ/pulse optical excitation energy.
|Number of pages||2|
|State||Published - 2002|
|Event||Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States|
Duration: 19 May 2002 → 24 May 2002
|Conference||Conference on Lasers and Electro-Optics (CLEO 2002)|
|City||Long Beach, CA|
|Period||19/05/02 → 24/05/02|