High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime

Jin Wei Shi; Yen Hung Chen; Kian Giap Gan; Yi Jen Chiu; Chi Kuang Sun; John E. Bowers

doi:10.1109/68.986814

High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime

Jin Wei Shi, Yen Hung Chen, Kian Giap Gan, Yi Jen Chiu, Chi Kuang Sun, John E. Bowers

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/68.986814
State	Published - Mar 2002

Keywords

Low-temperature-grown GaAs
Metal-semiconductor-metal photodetectors
Self-alignment
Traveling-wave photodetectors
Ultrahigh bandwidth photodetectors
p-i-n photodetector

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title = "High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime",

abstract = "In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.",

keywords = "Low-temperature-grown GaAs, Metal-semiconductor-metal photodetectors, Self-alignment, Traveling-wave photodetectors, Ultrahigh bandwidth photodetectors, p-i-n photodetector",

author = "Shi, {Jin Wei} and Chen, {Yen Hung} and Gan, {Kian Giap} and Chiu, {Yi Jen} and Sun, {Chi Kuang} and Bowers, {John E.}",

note = "Funding Information: Manuscript received September 18, 2001; revised November 9, 2001. This work is sponsored by National Science Council of Taiwan, R.O.C. under Grant NSC 89-2215-E-002-064 and by the National Science Foundation, USA under Award INT-9813411.",

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T1 - High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime

AU - Shi, Jin Wei

AU - Chen, Yen Hung

AU - Gan, Kian Giap

AU - Chiu, Yi Jen

AU - Sun, Chi Kuang

AU - Bowers, John E.

N1 - Funding Information: Manuscript received September 18, 2001; revised November 9, 2001. This work is sponsored by National Science Council of Taiwan, R.O.C. under Grant NSC 89-2215-E-002-064 and by the National Science Foundation, USA under Award INT-9813411.

PY - 2002/3

Y1 - 2002/3

N2 - In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.

AB - In this letter, we demonstrated ultrahigh bandwidth and high output power performances of low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal traveling wave photodetectors (MSM TWPDs) in the long wavelength regime (∼1300 nm). Ultrahigh bandwidth (1.3-ps pulsewidth with 234 GHz transformed 3-dB electrical bandwidth) was achieved with long-absorption-length (70-μm) devices due to the improved microwave property in the MSM TWPDs and their high velocity-mismatch bandwidth. Under high optical power illumination, these 70-μm-long MSM TWPD devices also exhibited superior output power-bandwidth-product performance due to their large absorption volumes. To the best of our knowledge, the demonstrated peak-output-voltage-bandwidth product (3.55 V, 160 GHz, 568 GHz-V) is the highest among the reported photodetectors for long optical communication wavelength (1.2 μm-1.6 μm) applications.

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High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime

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Keywords

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