High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations

Rui Lin Chao; Jhih Min Wun; Yu Wen Wang; Yi Han Chen; J. E. Bowers; Jin Wei Shi

doi:10.1109/IPCon.2016.7831186

High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations

Rui Lin Chao, Jhih Min Wun, Yu Wen Wang, Yi Han Chen, J. E. Bowers, Jin Wei Shi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

By using partially depleted Ga_0.8In_0.2As_0.16Sb_0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.

Original language	English
Title of host publication	2016 IEEE Photonics Conference, IPC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	472-473
Number of pages	2
ISBN (Electronic)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831186
State	Published - 23 Jan 2017
Event	29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: 2 Oct 2016 → 6 Oct 2016

Publication series

Name	2016 IEEE Photonics Conference, IPC 2016

Conference

Conference	29th IEEE Photonics Conference, IPC 2016
Country/Territory	United States
City	Waikoloa
Period	2/10/16 → 6/10/16

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10.1109/IPCon.2016.7831186

Cite this

Chao, R. L., Wun, J. M., Wang, Y. W., Chen, Y. H., Bowers, J. E., & Shi, J. W. (2017). High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 472-473). Article 7831186 (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831186

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title = "High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations",

abstract = "By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.",

author = "Chao, {Rui Lin} and Wun, {Jhih Min} and Wang, {Yu Wen} and Chen, {Yi Han} and Bowers, {J. E.} and Shi, {Jin Wei}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",

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doi = "10.1109/IPCon.2016.7831186",

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Chao, RL, Wun, JM, Wang, YW, Chen, YH, Bowers, JE & Shi, JW 2017, High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations. in 2016 IEEE Photonics Conference, IPC 2016., 7831186, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 472-473, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 2/10/16. https://doi.org/10.1109/IPCon.2016.7831186

High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations. / Chao, Rui Lin; Wun, Jhih Min; Wang, Yu Wen et al.
2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 472-473 7831186 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chao, Rui Lin

AU - Wun, Jhih Min

AU - Wang, Yu Wen

AU - Chen, Yi Han

AU - Bowers, J. E.

AU - Shi, Jin Wei

PY - 2017/1/23

Y1 - 2017/1/23

N2 - By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.

AB - By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.

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T3 - 2016 IEEE Photonics Conference, IPC 2016

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BT - 2016 IEEE Photonics Conference, IPC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th IEEE Photonics Conference, IPC 2016

Y2 - 2 October 2016 through 6 October 2016

ER -

High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations

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