High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations

Rui Lin Chao, Jhih Min Wun, Yu Wen Wang, Yi Han Chen, J. E. Bowers, Jin Wei Shi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μat-2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.

Original languageEnglish
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages472-473
Number of pages2
ISBN (Electronic)9781509019069
DOIs
StatePublished - 23 Jan 2017
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: 2 Oct 20166 Oct 2016

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Conference

Conference29th IEEE Photonics Conference, IPC 2016
Country/TerritoryUnited States
CityWaikoloa
Period2/10/166/10/16

Fingerprint

Dive into the research topics of 'High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations'. Together they form a unique fingerprint.

Cite this