High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

Guan Ting Chen, Chang Chi Pan, Chi Shin Fang, Tzu Chien Huang, Jen Inn Chyi, Mae Nan Chang, Sheng Bang Huang, Jung Tsung Hsu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.

Original languageEnglish
Pages (from-to)2797-2799
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
StatePublished - 4 Oct 2004

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