@article{d16e3bc3d6fd47bba60605175140e743,
title = "High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes",
abstract = "The investigation of the thermal stability, optical reflectivity and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN was discussed. It was shown that incontrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity and reflectivity after long-term annealing at 150°C in nitrogen ambient. It was suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment. The Pd/Ni/Al/Ti/Au contact was subjected to a long-term thermal aging test.",
author = "Chen, {Guan Ting} and Pan, {Chang Chi} and Fang, {Chi Shin} and Huang, {Tzu Chien} and Chyi, {Jen Inn} and Chang, {Mae Nan} and Huang, {Sheng Bang} and Hsu, {Jung Tsung}",
note = "Funding Information: This project is partially supported by the National Science Council of R.O.C. under Contract No. NSC 91-2215-E-008-014, the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, and the Opto-Electronics and System Laboratories of Industrial Technology Research Institute.",
year = "2004",
month = oct,
day = "4",
doi = "10.1063/1.1805199",
language = "???core.languages.en_GB???",
volume = "85",
pages = "2797--2799",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "14",
}