HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

I. Lin; D. C. Hinson; W. H. Class; R. Stander; Michael Hill; W. Vanden Bossche

HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

I. Lin, D. C. Hinson, W. H. Class, R. Stander, Michael Hill, W. Vanden Bossche

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

Original language	English
State	Published - Aug 1983
Event	Secondes Journ d'Etud sur la Gravure Seche en Microelectron - Grenoble, Fr Duration: 22 Nov 1983 → 24 Nov 1983

Conference

Conference	Secondes Journ d'Etud sur la Gravure Seche en Microelectron
City	Grenoble, Fr
Period	22/11/83 → 24/11/83

Cite this

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title = "HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.",

abstract = "Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.",

author = "I. Lin and Hinson, {D. C.} and Class, {W. H.} and R. Stander and Michael Hill and {Vanden Bossche}, W.",

year = "1983",

month = aug,

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note = "Secondes Journ d'Etud sur la Gravure Seche en Microelectron ; Conference date: 22-11-1983 Through 24-11-1983",

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TY - CONF

T1 - HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

AU - Lin, I.

AU - Hinson, D. C.

AU - Class, W. H.

AU - Stander, R.

AU - Hill, Michael

AU - Vanden Bossche, W.

PY - 1983/8

Y1 - 1983/8

N2 - Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

AB - Magnetron plasma etchers with axial magnetic fields and hexagonal and oval cross sections were constructed. Electron magnetic confinement sustains stable low pressure collisionless plasmas and generates high flux, low energy (50 - 300 eV) ion bombardment for high rate (approximately 0. 5 mu /min for SiO2) and low radiation damage etching. Etch uniformity and normal ion bombardment can be easily controlled by plasma optics. The magnetic field adds another degree of freedom for controlling plasma parameters and in turn the etching process. The basic principle of the magnetron etching is introduced.

UR - http://www.scopus.com/inward/record.url?scp=0020795058&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0020795058

T2 - Secondes Journ d'Etud sur la Gravure Seche en Microelectron

Y2 - 22 November 1983 through 24 November 1983

ER -

HIGH RATE MAGNETRON ION ETCHING FOR SILICON DEVICES.

Abstract

Conference

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