High quality InAs quantum dots with an In(Ga,Al)AsSb strain-reducing layer for long wavelength photonic devices

Jen Inn Chyi, Wei Sheng Liu, Pei Chin Chiu, Meng Jie Shiau, David M.T. Kuo, Wen Yen Chen, Hsing Szu Chang, Tzu Min Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in the wavelength of 1.3μm and above, which is essential for long wavelength photonic devices.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
PublisherElectrochemical Society Inc.
Pages35-40
Number of pages6
Edition2
ISBN (Electronic)9781566775519
ISBN (Print)9781566775519
DOIs
StatePublished - 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200710 May 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/TerritoryUnited States
CityChicago, IL
Period6/05/0710/05/07

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