High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

Yi Xuan; Yang Liu; Xiaoxiao Xue; Pei Hsun Wang; Jian Wang; Ben Niu; Kyunghun Han; Min Teng; Daniel E. Leaird; Andrew M. Weiner; Minghao Qi

doi:10.1364/CLEO_SI.2015.STu1I.6

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

Yi Xuan, Yang Liu, Xiaoxiao Xue, Pei Hsun Wang, Jian Wang, Ben Niu, Kyunghun Han, Min Teng, Daniel E. Leaird, Andrew M. Weiner, Minghao Qi

Department of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

SiN micro-resonators with a cross section of 3×0.6 μm² and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO-SI 2015
Publisher	Optical Society of America (OSA)
Pages	2267
Number of pages	1
ISBN (Electronic)	9781557529688
DOIs	https://doi.org/10.1364/CLEO_SI.2015.STu1I.6
State	Published - 4 May 2015
Event	CLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States Duration: 10 May 2015 → 15 May 2015

Publication series

Name	CLEO: Science and Innovations, CLEO-SI 2015

Conference

Conference	CLEO: Science and Innovations, CLEO-SI 2015
Country/Territory	United States
City	San Jose
Period	10/05/15 → 15/05/15

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10.1364/CLEO_SI.2015.STu1I.6

Cite this

Xuan, Y., Liu, Y., Xue, X., Wang, P. H., Wang, J., Niu, B., Han, K., Teng, M., Leaird, D. E., Weiner, A. M., & Qi, M. (2015). High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. In CLEO: Science and Innovations, CLEO-SI 2015 (pp. 2267). (CLEO: Science and Innovations, CLEO-SI 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_SI.2015.STu1I.6

@inproceedings{2bb1fd3fe65f4bea820fa7eb7d223de5,

title = "High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime",

abstract = "SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.",

author = "Yi Xuan and Yang Liu and Xiaoxiao Xue and Wang, {Pei Hsun} and Jian Wang and Ben Niu and Kyunghun Han and Min Teng and Leaird, {Daniel E.} and Weiner, {Andrew M.} and Minghao Qi",

year = "2015",

month = may,

day = "4",

doi = "10.1364/CLEO_SI.2015.STu1I.6",

language = "???core.languages.en_GB???",

series = "CLEO: Science and Innovations, CLEO-SI 2015",

publisher = "Optical Society of America (OSA)",

pages = "2267",

booktitle = "CLEO",

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Xuan, Y, Liu, Y, Xue, X, Wang, PH, Wang, J, Niu, B, Han, K, Teng, M, Leaird, DE, Weiner, AM & Qi, M 2015, High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. in CLEO: Science and Innovations, CLEO-SI 2015. CLEO: Science and Innovations, CLEO-SI 2015, Optical Society of America (OSA), pp. 2267, CLEO: Science and Innovations, CLEO-SI 2015, San Jose, United States, 10/05/15. https://doi.org/10.1364/CLEO_SI.2015.STu1I.6

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. / Xuan, Yi; Liu, Yang; Xue, Xiaoxiao et al.
CLEO: Science and Innovations, CLEO-SI 2015. Optical Society of America (OSA), 2015. p. 2267 (CLEO: Science and Innovations, CLEO-SI 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

AU - Xuan, Yi

AU - Liu, Yang

AU - Xue, Xiaoxiao

AU - Wang, Pei Hsun

AU - Wang, Jian

AU - Niu, Ben

AU - Han, Kyunghun

AU - Teng, Min

AU - Leaird, Daniel E.

AU - Weiner, Andrew M.

AU - Qi, Minghao

PY - 2015/5/4

Y1 - 2015/5/4

N2 - SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

AB - SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

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DO - 10.1364/CLEO_SI.2015.STu1I.6

M3 - 會議論文篇章

AN - SCOPUS:84935441281

T3 - CLEO: Science and Innovations, CLEO-SI 2015

SP - 2267

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO-SI 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

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