High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

Yi Xuan; Yang Liu; Xiaoxiao Xue; Pei Hsun Wang; Jian Wang; Ben Niu; Kyunghun Han; Min Teng; Daniel E. Leaird; Andrew M. Weiner; Minghao Qi

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

Yi Xuan, Yang Liu, Xiaoxiao Xue, Pei Hsun Wang, Jian Wang, Ben Niu, Kyunghun Han, Min Teng, Daniel E. Leaird, Andrew M. Weiner, Minghao Qi

Department of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

SiN micro-resonators with a cross section of 3×0.6 μm² and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

Original language	English
Title of host publication	2015 Conference on Lasers and Electro-Optics, CLEO 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557529688
State	Published - 10 Aug 2015
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 10 May 2015 → 15 May 2015

Publication series

Name	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2015-August

Conference

Conference	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	10/05/15 → 15/05/15

Keywords

Microcavities
Optical films
Optical waveguides
Q-factor
Resonant frequency
Silicon compounds

Cite this

Xuan, Y., Liu, Y., Xue, X., Wang, P. H., Wang, J., Niu, B., Han, K., Teng, M., Leaird, D. E., Weiner, A. M., & Qi, M. (2015). High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 Article 7184164 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{ac7365ca49ed4400b11df52e0641f3c4,

title = "High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime",

abstract = "SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.",

keywords = "Microcavities, Optical films, Optical waveguides, Q-factor, Resonant frequency, Silicon compounds",

author = "Yi Xuan and Yang Liu and Xiaoxiao Xue and Wang, {Pei Hsun} and Jian Wang and Ben Niu and Kyunghun Han and Min Teng and Leaird, {Daniel E.} and Weiner, {Andrew M.} and Minghao Qi",

note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

year = "2015",

month = aug,

day = "10",

language = "???core.languages.en_GB???",

series = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 Conference on Lasers and Electro-Optics, CLEO 2015",

}

Xuan, Y, Liu, Y, Xue, X, Wang, PH, Wang, J, Niu, B, Han, K, Teng, M, Leaird, DE, Weiner, AM & Qi, M 2015, High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7184164, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 10/05/15.

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime. / Xuan, Yi; Liu, Yang; Xue, Xiaoxiao et al.
2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7184164 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

AU - Xuan, Yi

AU - Liu, Yang

AU - Xue, Xiaoxiao

AU - Wang, Pei Hsun

AU - Wang, Jian

AU - Niu, Ben

AU - Han, Kyunghun

AU - Teng, Min

AU - Leaird, Daniel E.

AU - Weiner, Andrew M.

AU - Qi, Minghao

PY - 2015/8/10

Y1 - 2015/8/10

N2 - SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

AB - SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.

KW - Microcavities

KW - Optical films

KW - Optical waveguides

KW - Q-factor

KW - Resonant frequency

KW - Silicon compounds

UR - http://www.scopus.com/inward/record.url?scp=84954065824&partnerID=8YFLogxK

M3 - 會議論文篇章

AN - SCOPUS:84954065824

T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest

BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Lasers and Electro-Optics, CLEO 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime

Abstract

Publication series

Conference

Keywords

Fingerprint

Cite this