TY - JOUR
T1 - High-power and high-speed Zn-diffusion single fundamental-mode vertical-cavity surface-emitting lasers at 850-nm wavelength
AU - Shi, J. W.
AU - Chen, C. C.
AU - Wu, Y. S.
AU - Guol, S. H.
AU - Kuo, Chihping
AU - Yang, Ying Jay
N1 - Funding Information:
Manuscript received December 26, 2007; revised March 10, 2008. This work was supported by the National Science Council of Taiwan under Grant NSC-96-2221-E-008-121-MY3. J.-W. Shi, C.-C. Chen, and Y.-S. Wu are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). S.-H. Guol is with the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. C. Kuo is with Luxnet Corporation, Taoyuan 325, Taiwan, R.O.C. Y.-J. Yang is with the Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. Color versions of some of the figures in this letter are available online at http:// ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2008.924645 Fig. 1. (a) Cross-sectional view and (b) top-view of our device. The x and y axes, which are specified in our far-field measurement, are defined in (b).
PY - 2008/7/1
Y1 - 2008/7/1
N2 - We demonstrate a high-performance Zn-diffusion single-mode 850-nm vertical-cavity surface-emitting laser, which has a low threshold current (0.5 mA), high differential efficiency (80%), high modulation current efficiency (8.2 GHz/mA 1/2), and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current (1.8 mA) and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/ power-dissipation ratio of 6.5 Gps/mW.
AB - We demonstrate a high-performance Zn-diffusion single-mode 850-nm vertical-cavity surface-emitting laser, which has a low threshold current (0.5 mA), high differential efficiency (80%), high modulation current efficiency (8.2 GHz/mA 1/2), and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current (1.8 mA) and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/ power-dissipation ratio of 6.5 Gps/mW.
KW - Semiconductor laser
KW - Vertical-cavity surface-emitting laser (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=65449156013&partnerID=8YFLogxK
U2 - 10.1109/LPT.2008.924645
DO - 10.1109/LPT.2008.924645
M3 - 期刊論文
AN - SCOPUS:65449156013
SN - 1041-1135
VL - 20
SP - 1121
EP - 1123
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 13
ER -