High-power and high-speed Zn-diffusion single fundamental-mode vertical-cavity surface-emitting lasers at 850-nm wavelength

J. W. Shi, C. C. Chen, Y. S. Wu, S. H. Guol, Chihping Kuo, Ying Jay Yang

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

We demonstrate a high-performance Zn-diffusion single-mode 850-nm vertical-cavity surface-emitting laser, which has a low threshold current (0.5 mA), high differential efficiency (80%), high modulation current efficiency (8.2 GHz/mA 1/2), and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current (1.8 mA) and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/ power-dissipation ratio of 6.5 Gps/mW.

Original languageEnglish
Pages (from-to)1121-1123
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number13
DOIs
StatePublished - 1 Jul 2008

Keywords

  • Semiconductor laser
  • Vertical-cavity surface-emitting laser (VCSEL)

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