High-performance Zn-diffusion 850-nm vertical-cavity surface-emitting lasers with strained InAlGaAs multiple quantum wells

Engineering

• Cavity Surface 100%
• Quantum Efficiency 100%
• Dynamic Performance 100%
• Emitting Laser 100%
• Quantum Well 100%
• Maximum Output Power 100%
• Aluminium Gallium Arsenide 100%
• Gallium Arsenide 50%
• Energy Dissipation 50%
• Current Efficiency 50%
• Current Threshold 50%
• Voltage Driving 50%
• High Data Rate 50%
• Maximum Data Rate 50%
• Active Region 50%

Keyphrases

• High Performance 100%
• Zn Diffusion 100%
• Vertical-cavity Surface-emitting Laser (VCSEL) 100%
• Multiple Quantum Wells 100%
• InAlGaAs 100%
• Diffusion Depth 60%
• Differential Quantum Efficiency 40%
• Static Performance 40%
• Dynamic Performance 40%
• D Factor 40%
• Maximum Output Power 40%
• Higher Differential 40%
• Modulated Current 20%
• Current Efficiency 20%
• Active Regions 20%
• Error-free 20%
• Oxides 20%
• Power Dissipation 20%
• Driving Voltage 20%
• High Data Rate 20%
• AlGaAs 20%
• Maximum Data Rate 20%
• Low Threshold Voltage 20%
• GaAs-AlGaAs 20%

Physics

• Surface Emitting Laser 100%
• Multiple Quantum Well 100%