High performance spiral inductor on deep-trench-mesh silicon substrate

Hsin Lung Tu, I. Shan Chen, Ping Chun Yeh, Hwann Kaeo Chiou

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f res) and high peak quality factor (Q peak) in a 0.35-μm 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q penk, f res, and chip area. Meanwhile, a broad Q peak frequency response was found in deep-trench-mesh inductors.

Original languageEnglish
Pages (from-to)654-656
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number12
StatePublished - Dec 2006


  • Deep-trench-mesh
  • Inductor
  • Quality factor
  • Resonant frequency


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