High performance spiral inductor on deep-trench-mesh silicon substrate

Hsin Lung Tu; I. Shan Chen; Ping Chun Yeh; Hwann Kaeo Chiou

doi:10.1109/LMWC.2006.885608

High performance spiral inductor on deep-trench-mesh silicon substrate

Hsin Lung Tu, I. Shan Chen, Ping Chun Yeh, Hwann Kaeo Chiou

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f _res) and high peak quality factor (Q _peak) in a 0.35-μm 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f _res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q _peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q _penk, f _res, and chip area. Meanwhile, a broad Q _peak frequency response was found in deep-trench-mesh inductors.

Original language	English
Pages (from-to)	654-656
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	12
DOIs	https://doi.org/10.1109/LMWC.2006.885608
State	Published - Dec 2006

Keywords

Deep-trench-mesh
Inductor
Quality factor
Resonant frequency

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10.1109/LMWC.2006.885608

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title = "High performance spiral inductor on deep-trench-mesh silicon substrate",

abstract = "This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f res) and high peak quality factor (Q peak) in a 0.35-μm 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q penk, f res, and chip area. Meanwhile, a broad Q peak frequency response was found in deep-trench-mesh inductors.",

keywords = "Deep-trench-mesh, Inductor, Quality factor, Resonant frequency",

author = "Tu, {Hsin Lung} and Chen, {I. Shan} and Yeh, {Ping Chun} and Chiou, {Hwann Kaeo}",

note = "Funding Information: Manuscript received May 16, 2006; revised July 30, 2006. This work was supported in part by the National Science Council (NSC) of Taiwan, R.O.C., under Project NSC 94-2219-E-008-006 and by the National Chip Implementation Center (CIC) of National Applied Research Laboratories, Taiwan, R.O.C.",

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doi = "10.1109/LMWC.2006.885608",

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T1 - High performance spiral inductor on deep-trench-mesh silicon substrate

AU - Tu, Hsin Lung

AU - Chen, I. Shan

AU - Yeh, Ping Chun

AU - Chiou, Hwann Kaeo

N1 - Funding Information: Manuscript received May 16, 2006; revised July 30, 2006. This work was supported in part by the National Science Council (NSC) of Taiwan, R.O.C., under Project NSC 94-2219-E-008-006 and by the National Chip Implementation Center (CIC) of National Applied Research Laboratories, Taiwan, R.O.C.

PY - 2006/12

Y1 - 2006/12

N2 - This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f res) and high peak quality factor (Q peak) in a 0.35-μm 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q penk, f res, and chip area. Meanwhile, a broad Q peak frequency response was found in deep-trench-mesh inductors.

AB - This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f res) and high peak quality factor (Q peak) in a 0.35-μm 3P3M SiGe BiCMOS process. The main advantages of the deep-trench-mesh structure were twofold: 1) deep-trench-mesh pattern decreased capacitive coupling and increased f res by 10% compared to a conventional structure and 2) decreased resistive losses and increased Q peak around 15%. The overall figure-of-merit was improved by 28% while dealing with Q penk, f res, and chip area. Meanwhile, a broad Q peak frequency response was found in deep-trench-mesh inductors.

KW - Deep-trench-mesh

KW - Inductor

KW - Quality factor

KW - Resonant frequency

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U2 - 10.1109/LMWC.2006.885608

DO - 10.1109/LMWC.2006.885608

M3 - 期刊論文

AN - SCOPUS:33845538128

SN - 1531-1309

VL - 16

SP - 654

EP - 656

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 12

ER -

High performance spiral inductor on deep-trench-mesh silicon substrate

Abstract

Keywords

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