High performance power VDMOSFETs with a split-gate floating np-well design

Chien Nan Liao, Feng Tso Chien, Chii Wen Chen, Ching Hwa Cheng, Yao Tsung Tsai

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Low gate charge power vertical double-diffused MOSFET devices are required for high-frequency systems. In this study, we proposed a split-gate with a floating np-well structure, which realizes a low gate charge performance without significantly degrading the breakdown voltage. The proposed structure removes the partial gate area between the gate and drain overlap area, and combines with an additional np-well. By this approach, the gate charge and switching loss can be reduced, and the breakdown voltage can be sustained. The gate-drain charge and gate charge of the split-gate with an np-well structure are 41.4% and 66.1% of the conventional device, respectively. These improvements are beneficial for reducing the switching loss of the devices.

Original languageEnglish
Article number122001
JournalSemiconductor Science and Technology
Issue number12
StatePublished - 1 Dec 2008


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