High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers

Jen Wei Pan, Ming Hong Chen, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as -0.66 dB, in the temperature range of 25 °C-70 °C. This is attributed to the significant reduction of electron leakage over the p-cladding layer.

Original languageEnglish
Pages (from-to)923-926
Number of pages4
JournalJournal of Crystal Growth
StatePublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 31 Aug 19984 Sep 1998


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