High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics

Ang Sheng Chou, Yu Tung Lin, Yuxuan Cosmi Lin, Ching Hao Hsu, Ming Yang Li, San Lin Liew, Sui An Chou, Hung Yu Chen, Hsin Yuan Chiu, Po Hsun Ho, Ming Chun Hsu, Yu Wei Hsu, Ning Yang, Wei Yen Woon, Szuya Liao, Duen Huei Hou, Chao Hsin Chien, Wen Hao Chang, Iuliana Radu, Chih I. WuH. S. Philip Wong, Han Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Low resistance contact technology for 2D semiconductors is a key bottleneck for the practical application of 2D channel materials at advanced logic nodes. This work presents a novel Sb-Pt modulated contact technology which can alleviate the Fermi-level pinning effect and mediate the band alignment at the metal-2D semiconductor interface, leading to exceptional ohmic contacts for both p-type and n-type WSe2 FETs (p/n FET). WSe2 FETs with different Sb/Pt contact compositions, in combination with new oxide-based encapsulation/doping technologies, exhibits record low pFET contact resistance of 0.75 mathrm{k} Omega bullet mu mathrm{m} among all reported monolayer (1L) 2D pFETs. The nFET contact resistance of 1.8 mathrm{k} Omega bullet mu mathrm{m} is also the lowest among 1L WSe2 nFETs. Both 1L WSe2 pFET and nFET demonstrated remarkable on-state p/n current sim 150 mu mathrm{A}/ mu mathrm{m} at vert mathrm{V}-{D} vert =1 mathrm{V}, indicating the potential of WSe2 for CMOS applications. A new version of the semi-automated dry transfer process for chemical vapor deposition (CVD) WSe2 was also developed utilizing a novel Bi/PMMA/TRT support stack, offering low defect wrinkle-free WSe2 transfer at wafer-scale.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages721-724
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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