@inproceedings{13a7b9ed64be4ea585e9a915cba53de5,
title = "High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics",
abstract = "Low resistance contact technology for 2D semiconductors is a key bottleneck for the practical application of 2D channel materials at advanced logic nodes. This work presents a novel Sb-Pt modulated contact technology which can alleviate the Fermi-level pinning effect and mediate the band alignment at the metal-2D semiconductor interface, leading to exceptional ohmic contacts for both p-type and n-type WSe2 FETs (p/n FET). WSe2 FETs with different Sb/Pt contact compositions, in combination with new oxide-based encapsulation/doping technologies, exhibits record low pFET contact resistance of 0.75 mathrm{k} Omega bullet mu mathrm{m} among all reported monolayer (1L) 2D pFETs. The nFET contact resistance of 1.8 mathrm{k} Omega bullet mu mathrm{m} is also the lowest among 1L WSe2 nFETs. Both 1L WSe2 pFET and nFET demonstrated remarkable on-state p/n current sim 150 mu mathrm{A}/ mu mathrm{m} at vert mathrm{V}-{D} vert =1 mathrm{V}, indicating the potential of WSe2 for CMOS applications. A new version of the semi-automated dry transfer process for chemical vapor deposition (CVD) WSe2 was also developed utilizing a novel Bi/PMMA/TRT support stack, offering low defect wrinkle-free WSe2 transfer at wafer-scale.",
author = "Chou, {Ang Sheng} and Lin, {Yu Tung} and Lin, {Yuxuan Cosmi} and Hsu, {Ching Hao} and Li, {Ming Yang} and Liew, {San Lin} and Chou, {Sui An} and Chen, {Hung Yu} and Chiu, {Hsin Yuan} and Ho, {Po Hsun} and Hsu, {Ming Chun} and Hsu, {Yu Wei} and Ning Yang and Woon, {Wei Yen} and Szuya Liao and Hou, {Duen Huei} and Chien, {Chao Hsin} and Chang, {Wen Hao} and Iuliana Radu and Wu, {Chih I.} and {Philip Wong}, {H. S.} and Han Wang",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019491",
language = "???core.languages.en_GB???",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "721--724",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
}