High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-μm wavelength

Y. S. Wu, J. W. Shi, J. Y. Wu, F. H. Huang, Y. J. Chan, Y. L. Huang, R. Xuan

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

In this letter, we demonstrate a high-performance evanescently coupled photodiode (ECPD) with the partially p-doped photoabsorption layer. As compared to the control ECPD with the traditional intrinsic photoabsorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance. By properly designing the geometry size and epilayer structures of the partially p-doped ECPD, very high responsivity (1.01 A/W), high electrical bandwidth (around 50 GHz), and high saturation current bandwidth product (920 mA. GHz, at 40 GHz) have been achieved simultaneously at 1.55-μm wavelength.

Original languageEnglish
Pages (from-to)878-880
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number4
DOIs
StatePublished - Apr 2005

Keywords

  • Evanescent coupling
  • High efficiency
  • High-power photodiode
  • Optical receivers
  • Photodiode

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