TY - JOUR
T1 - High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes
AU - Wu, Y. S.
AU - Shi, J. W.
AU - Chiu, P. H.
AU - Lin, Wei
N1 - Funding Information:
Manuscript received February 22, 2007; revised June 21, 2007. This work was sponsored by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003-. Y.-S. Wu, J.-W. Shi, and P.-H. Chiu are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). W. Lin is with the Land Mark Optoelectronics Corporation, Tainan 710, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.905185 Fig. 1. (a) Cross-sectional view and (b) top-view of the demonstrated DECPD; (c) shows the top-view after zooming in on the active part of device. T and represents the thickness and bandgap wavelength of the specified epi-layer, respectively.
PY - 2007/10
Y1 - 2007/10
N2 - In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.
AB - In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.
KW - Evanescent coupling
KW - High efficiency
KW - High-power photodiode
KW - Optical receivers
KW - Photodiode (PD)
UR - http://www.scopus.com/inward/record.url?scp=35448954101&partnerID=8YFLogxK
U2 - 10.1109/LPT.2007.905185
DO - 10.1109/LPT.2007.905185
M3 - 期刊論文
AN - SCOPUS:35448954101
SN - 1041-1135
VL - 19
SP - 1682
EP - 1684
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 20
ER -