High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes

Y. S. Wu; J. W. Shi; P. H. Chiu; Wei Lin

doi:10.1109/LPT.2007.905185

High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes

Y. S. Wu, J. W. Shi, P. H. Chiu, Wei Lin

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.

Original language	English
Pages (from-to)	1682-1684
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2007.905185
State	Published - Oct 2007

Keywords

Evanescent coupling
High efficiency
High-power photodiode
Optical receivers
Photodiode (PD)

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10.1109/LPT.2007.905185

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title = "High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes",

abstract = "In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.",

keywords = "Evanescent coupling, High efficiency, High-power photodiode, Optical receivers, Photodiode (PD)",

author = "Wu, {Y. S.} and Shi, {J. W.} and Chiu, {P. H.} and Wei Lin",

note = "Funding Information: Manuscript received February 22, 2007; revised June 21, 2007. This work was sponsored by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003-. Y.-S. Wu, J.-W. Shi, and P.-H. Chiu are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: jwshi@ee.ncu.edu.tw). W. Lin is with the Land Mark Optoelectronics Corporation, Tainan 710, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.905185 Fig. 1. (a) Cross-sectional view and (b) top-view of the demonstrated DECPD; (c) shows the top-view after zooming in on the active part of device. T and represents the thickness and bandgap wavelength of the specified epi-layer, respectively.",

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T1 - High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes

AU - Wu, Y. S.

AU - Shi, J. W.

AU - Chiu, P. H.

AU - Lin, Wei

N1 - Funding Information: Manuscript received February 22, 2007; revised June 21, 2007. This work was sponsored by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003-. Y.-S. Wu, J.-W. Shi, and P.-H. Chiu are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: jwshi@ee.ncu.edu.tw). W. Lin is with the Land Mark Optoelectronics Corporation, Tainan 710, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.905185 Fig. 1. (a) Cross-sectional view and (b) top-view of the demonstrated DECPD; (c) shows the top-view after zooming in on the active part of device. T and represents the thickness and bandgap wavelength of the specified epi-layer, respectively.

PY - 2007/10

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N2 - In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.

AB - In this letter, we discuss a dual-step evanescently coupled photodiode (PD), which is composed of an improved evanescently coupled optical waveguide and a uni-traveling-carrier PD (UTC-PD). The hitherto serious dependence of the responsivity on the coupling length, which is determined by the cleaving process, or the necessity of a long (∼700 μm) passive waveguide with a complex tapered structure, can be eliminated. The optimization of the waveguide structure, and the doping profile of the p-type absorption layer, allow the integrated UTC-PD to achieve a high responsivity (0.9 A/W, 1.04 A/W), with a large cleaving tolerance (∼50 μm), a wide invariable electrical 3-dB bandwidth (60 GHz, 40 GHz) from a low (∼0.5 mA) to a high output current (>13 mA), and a high saturation current-bandwidth product (around 780 mA ·GHz) simultaneously under a load of 50 Ω.

KW - Evanescent coupling

KW - High efficiency

KW - High-power photodiode

KW - Optical receivers

KW - Photodiode (PD)

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DO - 10.1109/LPT.2007.905185

M3 - 期刊論文

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

High-performance dual-step evanescently coupled uni-traveling-carrier photodiodes

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Keywords

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