Abstract
High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-m anode-to-cathode spacing exhibit a high breakdown voltage VB of 3489 V, a low leakage current IR of less than 0.2 A at 2000 V, and a low specific on-resistance R of 7.9 cm2, resulting in a figure of merit VB 2/R on as high as 1.54 GW/cm2. Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.
Original language | English |
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Article number | 6022747 |
Pages (from-to) | 1519-1521 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2011 |
Keywords
- AlGaN/AlN buffer
- AlGaN/GaN
- Schottky barrier diodes (SBDs)