High-performance AlGaN/GaN schottky diodes with an AlGaN/AlN buffer layer

Geng Yen Lee, Hsueh Hsing Liu, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-m anode-to-cathode spacing exhibit a high breakdown voltage VB of 3489 V, a low leakage current IR of less than 0.2 A at 2000 V, and a low specific on-resistance R of 7.9 cm2, resulting in a figure of merit VB 2/R on as high as 1.54 GW/cm2. Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.

Original languageEnglish
Article number6022747
Pages (from-to)1519-1521
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 2011


  • AlGaN/AlN buffer
  • AlGaN/GaN
  • Schottky barrier diodes (SBDs)


Dive into the research topics of 'High-performance AlGaN/GaN schottky diodes with an AlGaN/AlN buffer layer'. Together they form a unique fingerprint.

Cite this