High performacne InAs/AlSb HEMT with refractory iridium Schottky gate metal

Wen Yu Lin, Chao Hung Chen, Hsien Chin Chiu, Fan Hsiu Huang, W. J. Hsueh, Yue Ming Hsin, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In the work, a novel approach in fabricating high-performance of InAs/AlSb high electron mobility transistors using iridium (Ir) gate technology was proposed and investigated. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height (FB) of InAs/AlSb heterostructure from 0.54 to 0.58 eV. The Ir-gate InAs/AlSb HEMT exhibited a Vth of -0.9 V, a maximum drain current of 270 mA/mm, and a peak transconductance of 420 mS/mm. In contrast, the Vth of Ti-gate InAs/AlSb HEMT was -1.5 V, a maximum drain current of 257mA/mm, and a peak transconductance of 280mS /mm, respectively. It was suggested that Ir interface presented a high potential for high power transistor applications.

Original languageEnglish
Title of host publication2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs
StatePublished - 2013
Event2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan
Duration: 19 May 201323 May 2013

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Country/TerritoryJapan
CityKobe
Period19/05/1323/05/13

Keywords

  • AlSb
  • iridium
  • Titanium Schottky barrier height

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