High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

Research output: Contribution to conferencePaperpeer-review

Fingerprint

Dive into the research topics of 'High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs'. Together they form a unique fingerprint.

Keyphrases

Material Science