We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.
|State||Published - 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|