High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang; J. L. Shieh; R. M. Lin; J. I. Chyi; S. L. Tu; C. K. Peng; S. J. Yang

doi:10.1109/EDMS.1994.771193

High peak-to-valley current ratio In_0.3Ga_0.7As/In_0.29Al_0.7, As resonant tunneling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

Research output: Contribution to conference › Paper › peer-review

Abstract

We have investigated the current-voltage characteristics of In_0.3Ga_0.7As/In_0.29Al_0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In_0.3Ga_0.7As and GaAs.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771193
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

Access to Document

10.1109/EDMS.1994.771193

Cite this

@conference{546a18fd80e94cb89bf52b7f52b8dfb9,

title = "High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs",

abstract = "We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.",

author = "Hwang, {H. P.} and Shieh, {J. L.} and Lin, {R. M.} and Chyi, {J. I.} and Tu, {S. L.} and Peng, {C. K.} and Yang, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771193",

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}

TY - CONF

T1 - High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.7, As resonant tunneling diodes grown on GaAs

AU - Hwang, H. P.

AU - Shieh, J. L.

AU - Lin, R. M.

AU - Chyi, J. I.

AU - Tu, S. L.

AU - Peng, C. K.

AU - Yang, S. J.

PY - 1994

Y1 - 1994

N2 - We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

AB - We have investigated the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunneling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

UR - http://www.scopus.com/inward/record.url?scp=85063579394&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771193

DO - 10.1109/EDMS.1994.771193

M3 - 會議論文

AN - SCOPUS:85063579394

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994