High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Wei Sheng Liu; Hong Ming Wu; Yu Ann Liao; Jen Inn Chyi; Wen Yen Chen; Tzu Min Hsu

doi:10.1016/j.jcrysgro.2010.10.136

High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Wei Sheng Liu
, Hong Ming Wu
, Yu Ann Liao
, Jen Inn Chyi
, Wen Yen Chen
, Tzu Min Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×10¹⁰ cm^-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

Original language	English
Pages (from-to)	164-166
Number of pages	3
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.136
State	Published - 15 May 2011

Keywords

Molecular beam epitaxy
Nanostructures
Semiconducting IIIV materials
Semiconducting indium compound

Access to Document

10.1016/j.jcrysgro.2010.10.136

Cite this

@article{dcce2c8bae5c40458cfa58900854b93d,

title = "High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers",

abstract = "This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.",

keywords = "Molecular beam epitaxy, Nanostructures, Semiconducting IIIV materials, Semiconducting indium compound",

author = "Liu, \{Wei Sheng\} and Wu, \{Hong Ming\} and Liao, \{Yu Ann\} and Chyi, \{Jen Inn\} and Chen, \{Wen Yen\} and Hsu, \{Tzu Min\}",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan of ROC under Contract no. NSC 98-2218-E-155-010 .",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.10.136",

language = "???core.languages.en\_GB???",

volume = "323",

pages = "164--166",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

}

TY - JOUR

T1 - High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

AU - Liu, Wei Sheng

AU - Wu, Hong Ming

AU - Liao, Yu Ann

AU - Chyi, Jen Inn

AU - Chen, Wen Yen

AU - Hsu, Tzu Min

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan of ROC under Contract no. NSC 98-2218-E-155-010 .

PY - 2011/5/15

Y1 - 2011/5/15

N2 - This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

AB - This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

KW - Molecular beam epitaxy

KW - Nanostructures

KW - Semiconducting IIIV materials

KW - Semiconducting indium compound

UR - https://www.scopus.com/pages/publications/79957973621

U2 - 10.1016/j.jcrysgro.2010.10.136

DO - 10.1016/j.jcrysgro.2010.10.136

M3 - 期刊論文

AN - SCOPUS:79957973621

SN - 0022-0248

VL - 323

SP - 164

EP - 166

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Abstract

Keywords

Access to Document

Fingerprint

Cite this