Abstract
This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.
Original language | English |
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Pages (from-to) | 164-166 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 323 |
Issue number | 1 |
DOIs | |
State | Published - 15 May 2011 |
Keywords
- Molecular beam epitaxy
- Nanostructures
- Semiconducting IIIV materials
- Semiconducting indium compound