High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Wei Sheng Liu, Hong Ming Wu, Yu Ann Liao, Jen Inn Chyi, Wen Yen Chen, Tzu Min Hsu

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5×1010 cm-2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

Original languageEnglish
Pages (from-to)164-166
Number of pages3
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
StatePublished - 15 May 2011

Keywords

  • Molecular beam epitaxy
  • Nanostructures
  • Semiconducting IIIV materials
  • Semiconducting indium compound

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