High Linearity InGaP/GaAs Power HBTs by Collector Design

Che Ming Wang, Hung Tsao Hsu, Hsiu Chuan Shu, Yue Ming Hsin

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Improved power linearity of InGaP/GaAs heterojunction bipolar transistors (HBTs) with collector design is reported. The collector design is based on nonuniform collector doping profile which is to employ a thin high-doping layer (5 × 1017 cm-3/200 A) inside the collector (1 × 1016 cm-3/7000 Å). The additional thin high-doping layer within the collector shows no obvious effects and impacts in dc characteristics and device fabrication if the layer was inserted close to the subcollector. For an HBT with a thin high-doping layer being inserted 4000 Å from the base-collector junction, the experimental result on third-order intermodulation demonstrates the significant reduction by as large as 9 dBc and improved IIP3 by 5 dB under input power of -10 dBm at frequency of 1.8 GHz.

Original languageEnglish
Pages (from-to)58-60
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2004


  • Heterojunction bipolor transistor (HBT)
  • Inter-modulation
  • Linearity


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