High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Keyphrases

• Field-effect Transistors 100%
• Molecular Beam Epitaxy 100%
• InGaSb 100%
• AlSb 100%
• High Hole Mobility 100%
• Quantum Well Field Effect Transistor 50%
• Room Temperature 25%
• Si Substrate 25%
• Metamorphic Buffer 25%
• Growth Temperature 25%
• Hole Mobility 25%
• GaAsSb 25%
• Step Graded 25%
• Anisotropic Behavior 25%
• Optimized Growth 25%

Material Science

• Field Effect Transistor 100%
• Hole Mobility 100%
• Molecular Beam Epitaxy 100%
• Quantum Well 66%
• Buffer Layer 33%

Engineering

• Field-Effect Transistor 100%
• Quantum Well 66%
• Room Temperature 33%
• Growth Temperature 33%
• Si Substrate 33%
• Buffer Layer 33%
• Anisotropic Behavior 33%