High-gain 60-GHz on-chip PIFA using IPD technology

Ta Yeh Lin, Tsenchieh Chiu, Yin Cheng Chang, Chaoping Hsieh, Da Chiang Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A first high-gain 60-GHz PIFA implemented with a silicon substrate Integrated Passive Device (IPD) technology is presented in the paper. The PIFA which was used with L-shape ground structure could change the radiation pattern and enhance the antenna gain. Simulation and measurement regarding antenna reflection coefficient are conducted for design validation. The measured results show that the antenna can operate in 60-GHz band, and the impedance bandwidth with S11 less than -10 dB is 11%. The measured gain is 5 dBi at 60 GHz. The total chip size is 1.05 × 1.25 mm2. The proposed design is well suited for System-in-Package 60-GHz radio front-ends.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
StatePublished - 27 Sep 2016
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan
Duration: 24 Aug 201626 Aug 2016

Publication series

NameRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Conference

Conference2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Country/TerritoryTaiwan
CityTaipei
Period24/08/1626/08/16

Keywords

  • 60-GHz
  • IPD technology
  • millimeter-wave
  • on-chip antenna
  • PIFA

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