High-frequency noise modeling of InGaP/GaAs HBT with base-contact capacitance and AC current crowding effect

Shou Chien Huang, Wen Bin Tang, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A heterojunction-bipolar-transistor (HBT) noise model including the base-impedance effect is presented, which takes into account the base-contact capacitance and ac current crowding effect. The proposed noise model describes well the high-frequency noise characteristics of InGaP/GaAs HBTs in the presence of base-impedance effect. Good agreement is observed between the measured and calculated noise parameters for the different sizes of InGaP/GaAs HBTs. We found that the effect of ac current crowding on noise parameters is more critical than that of base-contact capacitance.

Original languageEnglish
Pages (from-to)1125-1127
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
StatePublished - 2009

Keywords

  • AC current crowding effect
  • Heterojunction bipolar transistor (HBT)
  • Noise

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