High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo; Indraneel Sanyal; Wei Chen Tzeng; Yu Li Ho; Ya Chun Chang; Chih Chao Hsu; Jen Inn Chyi; Chao Hsin Wu

doi:10.1109/WiPDAAsia49671.2020.9360271

High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo, Indraneel Sanyal, Wei Chen Tzeng, Yu Li Ho, Ya Chun Chang, Chih Chao Hsu, Jen Inn Chyi, Chao Hsin Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

Original language	English
Title of host publication	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728159553
DOIs	https://doi.org/10.1109/WiPDAAsia49671.2020.9360271
State	Published - 23 Sep 2020
Event	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan Duration: 23 Sep 2020 → 25 Sep 2020

Publication series

Name	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

Conference

Conference	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Country/Territory	Japan
City	Suita
Period	23/09/20 → 25/09/20

Keywords

InAlN/GaN HEMT
T-gate
high frequency application

Access to Document

10.1109/WiPDAAsia49671.2020.9360271

Cite this

Luo, Y. J., Sanyal, I., Tzeng, W. C., Ho, Y. L., Chang, Y. C., Hsu, C. C., Chyi, J. I., & Wu, C. H. (2020). High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. In 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 Article 9360271 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia49671.2020.9360271

Luo, Yu Jie ; Sanyal, Indraneel ; Tzeng, Wei Chen et al. / High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

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title = "High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer",

abstract = "Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.",

keywords = "InAlN/GaN HEMT, T-gate, high frequency application",

author = "Luo, {Yu Jie} and Indraneel Sanyal and Tzeng, {Wei Chen} and Ho, {Yu Li} and Chang, {Ya Chun} and Hsu, {Chih Chao} and Chyi, {Jen Inn} and Wu, {Chao Hsin}",

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Luo, YJ, Sanyal, I, Tzeng, WC, Ho, YL, Chang, YC, Hsu, CC, Chyi, JI & Wu, CH 2020, High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. in 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020., 9360271, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Suita, Japan, 23/09/20. https://doi.org/10.1109/WiPDAAsia49671.2020.9360271

High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. / Luo, Yu Jie; Sanyal, Indraneel; Tzeng, Wei Chen et al.
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9360271 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Luo, Yu Jie

AU - Sanyal, Indraneel

AU - Tzeng, Wei Chen

AU - Ho, Yu Li

AU - Chang, Ya Chun

AU - Hsu, Chih Chao

AU - Chyi, Jen Inn

AU - Wu, Chao Hsin

PY - 2020/9/23

Y1 - 2020/9/23

N2 - Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

AB - Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns.

KW - InAlN/GaN HEMT

KW - T-gate

KW - high frequency application

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Luo YJ, Sanyal I, Tzeng WC, Ho YL, Chang YC, Hsu CC et al. High Electron Mobility of 1880 cm²V-S In_0.17Al_0.83N/GaN-on-Si HEMTs with GaN Cap Layer. In 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9360271. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). doi: 10.1109/WiPDAAsia49671.2020.9360271