High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

Yu Jie Luo, Indraneel Sanyal, Wei Chen Tzeng, Yu Li Ho, Ya Chun Chang, Chih Chao Hsu, Jen Inn Chyi, Chao Hsin Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns. Also, growing a thin GaN cap layer to prevent barrier from oxidation and fabricating T-shaped gate to improving high frequency characteristics are done

Original languageEnglish
Title of host publication2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728159553
DOIs
StatePublished - 23 Sep 2020
Event2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan
Duration: 23 Sep 202025 Sep 2020

Publication series

Name2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

Conference

Conference2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Country/TerritoryJapan
CitySuita
Period23/09/2025/09/20

Keywords

  • high frequency application
  • InAlN/GaN HEMT
  • T-gate

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