Projects per year
Abstract
This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%.
Original language | English |
---|---|
Article number | 3494 |
Journal | Electronics (Switzerland) |
Volume | 12 |
Issue number | 16 |
DOIs | |
State | Published - Aug 2023 |
Keywords
- 5G
- GaAs
- GaN/SiC
- IPD
- broadband
- continuous Class-J mode
- power amplifier (PA)
- quasi-monolithic microwave integrated circuit (quasi-MMIC)
Fingerprint
Dive into the research topics of 'High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands'. Together they form a unique fingerprint.Projects
- 1 Finished
-
Research on Power Amplifiers and Transmitter with Wide Signal Bandwidth, High Linearity, and Low Memory Effect for 5g Small Cell Applications(3/3)
Chiou, H.-K. (PI)
1/08/22 → 31/10/23
Project: Research