@inproceedings{402de08adda24c6d9fcc54cff146f364,
title = "High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning",
abstract = "We present the first demonstration of 1T4R Resistive RAM (RRAM) array storing two bits per RRAM cell. Our HfO2- based RRAM is built using a logic foundry technology that is fully compatible with the CMOS back-end process. We present a new approach to program RRAM cells using gradual SET/RESET pulses while minimizing disturbances on adjacent cells (belonging to the same 1T4R RRAM structure) - this new approach makes our multiple-bits-per-cell 1T4R RRAM array demonstration possible. We report over 106 cycles of endurance and a projected 10-year retention at 120°C. Using measured data from our 2 bits- per-cell 1T4R RRAM array, we analyze multiple deep learning applications and demonstrate high degrees of inference accuracy (within 0.01% of ideal values).",
author = "Hsieh, {E. R.} and X. Zheng and M. Nelson and Le, {B. Q.} and Wong, {H. S.P.} and S. Mitra and S. Wong and M. Giordano and B. Hodson and A. Levy and Osekowsky, {S. K.} and Radway, {R. M.} and Shih, {Y. C.} and W. Wan and Wu, {T. F.}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",
year = "2019",
month = dec,
doi = "10.1109/IEDM19573.2019.8993514",
language = "???core.languages.en_GB???",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",
}