High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor

Shu Han Chen; Sheng Yu Wang; Kuo Hung Teng; Jen Inn Chyi

doi:10.1109/ICIPRM.2007.381143

High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor

Shu Han Chen, Sheng Yu Wang, Kuo Hung Teng, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In_0.52Al_0.48As/ In_xGa_1-xAs_1-ySb_y HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower V_CE,offset voltage and a greater junction ideality factor than conventional In _0.52Al_0.48As/In_0.53Ga_0.47As single HBT structures. The quaternary In_xGa_1-xAS _1-ySb_y base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

Original language	English
Title of host publication	IPRM'07
Subtitle of host publication	IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages	141-144
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2007.381143
State	Published - 2007
Event	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan Duration: 14 May 2007 → 18 May 2007

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Matsue
Period	14/05/07 → 18/05/07

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10.1109/ICIPRM.2007.381143

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Chen, S. H., Wang, S. Y., Teng, K. H., & Chyi, J. I. (2007). High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 141-144). Article 4265900 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381143

Chen, Shu Han ; Wang, Sheng Yu ; Teng, Kuo Hung et al. / High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor. IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. pp. 141-144 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

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title = "High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor",

abstract = "This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In0.52Al0.48As/ InxGa1-xAs1-ySby HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE,offset voltage and a greater junction ideality factor than conventional In 0.52Al0.48As/In0.53Ga0.47As single HBT structures. The quaternary InxGa1-xAS 1-ySby base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.",

author = "Chen, {Shu Han} and Wang, {Sheng Yu} and Teng, {Kuo Hung} and Chyi, {Jen Inn}",

year = "2007",

doi = "10.1109/ICIPRM.2007.381143",

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Chen, SH, Wang, SY, Teng, KH & Chyi, JI 2007, High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor. in IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings., 4265900, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 141-144, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, 14/05/07. https://doi.org/10.1109/ICIPRM.2007.381143

High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor. / Chen, Shu Han; Wang, Sheng Yu; Teng, Kuo Hung et al.
IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 141-144 4265900 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor

AU - Chen, Shu Han

AU - Wang, Sheng Yu

AU - Teng, Kuo Hung

AU - Chyi, Jen Inn

PY - 2007

Y1 - 2007

N2 - This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In0.52Al0.48As/ InxGa1-xAs1-ySby HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE,offset voltage and a greater junction ideality factor than conventional In 0.52Al0.48As/In0.53Ga0.47As single HBT structures. The quaternary InxGa1-xAS 1-ySby base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

AB - This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In0.52Al0.48As/ InxGa1-xAs1-ySby HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE,offset voltage and a greater junction ideality factor than conventional In 0.52Al0.48As/In0.53Ga0.47As single HBT structures. The quaternary InxGa1-xAS 1-ySby base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

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M3 - 會議論文篇章

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SN - 142440875X

SN - 9781424408757

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

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T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials

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Chen SH, Wang SY, Teng KH, Chyi JI. High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 141-144. 4265900. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2007.381143

High current and low turn-on voltage InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistor

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