@article{a3ffaaaa2e8343fc932f03bebd6aac4b,
title = "High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy",
abstract = "Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.",
author = "Nee, {Tzer En} and Yeh, {Nien Tze} and Lee, {Jia Ming} and Chyi, {Jen Inn} and Lee, {Ching Ting}",
note = "Funding Information: The authors thank Dr. J.-L. Shieh, Dr. J.-W. Pan, and Mr. P.-W. Shiao for their assistance and fruitful discussion in epitaxial growth and device characterization. The support of the MBE laboratory of the Center for Optical Science at National Central University is gratefully acknowledged. This work was supported by the National Science Council of ROC under contract NSC87-2215-E008-012. ; Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",
year = "1999",
month = may,
doi = "10.1016/S0022-0248(99)00006-8",
language = "???core.languages.en_GB???",
volume = "201",
pages = "905--908",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
}