High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Chia Ming Lee; Chang Cheng Chuo; I. Ling Chen; Jui Cheng Chang; Jen Inn Chyi

doi:10.1109/LED.2003.809533

High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Chia Ming Lee, Chang Cheng Chuo, I. Ling Chen, Jui Cheng Chang, Jen Inn Chyi

Research output: Contribution to journal › Letter › peer-review

27 Scopus citations

Abstract

Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

Original language	English
Pages (from-to)	156-158
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	3
DOIs	https://doi.org/10.1109/LED.2003.809533
State	Published - Mar 2003

Keywords

GaN
Inverse light-emitting diodes
Light-emitting diodes (LEDs)
Tunneling

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10.1109/LED.2003.809533

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title = "High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer",

abstract = "Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.",

keywords = "GaN, Inverse light-emitting diodes, Light-emitting diodes (LEDs), Tunneling",

author = "Lee, {Chia Ming} and Chuo, {Chang Cheng} and Chen, {I. Ling} and Chang, {Jui Cheng} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received November 6, 2002; revised January 9, 2003. This work was supported in part by TEKCORE Company, Ltd., by the National Science Council of Taiwan, R.O.C., under Contract NSC89-2215-E-008-031, and by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4. The review of this letter was arranged by Editor D. Ritter.",

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T1 - High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

AU - Lee, Chia Ming

AU - Chuo, Chang Cheng

AU - Chen, I. Ling

AU - Chang, Jui Cheng

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received November 6, 2002; revised January 9, 2003. This work was supported in part by TEKCORE Company, Ltd., by the National Science Council of Taiwan, R.O.C., under Contract NSC89-2215-E-008-031, and by the Ministry of Education of R.O.C. under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4. The review of this letter was arranged by Editor D. Ritter.

PY - 2003/3

Y1 - 2003/3

N2 - Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

AB - Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

KW - GaN

KW - Inverse light-emitting diodes

KW - Light-emitting diodes (LEDs)

KW - Tunneling

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DO - 10.1109/LED.2003.809533

M3 - 通訊期刊論文

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SN - 0741-3106

VL - 24

SP - 156

EP - 158

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Abstract

Keywords

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