High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer

Chia Ming Lee, Chang Cheng Chuo, I. Ling Chen, Jui Cheng Chang, Jen Inn Chyi

Research output: Contribution to journalLetterpeer-review

26 Scopus citations

Abstract

Unlike the conventional layer structure of an InGaN-GaN multiple-quantum-well light-emitting diode (LED), an LED with reversed p-type and n-type layer sequence, and an n+/p+ tunnel junction has been investigated. When operated at 20 mA, the output power of the inverted LED is almost twice that of the conventional LED. Since the structures of these two LEDs are alike when analyzed by X-ray diffraction, the improvement in the light intensity could be attributed to the elimination of the absorption/reflection by the transparent conductive layer and/or some quality improvement of p-type GaN in the inverted LED.

Original languageEnglish
Pages (from-to)156-158
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number3
DOIs
StatePublished - Mar 2003

Keywords

  • GaN
  • Inverse light-emitting diodes
  • Light-emitting diodes (LEDs)
  • Tunneling

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