High breakdown voltage Au/Pt/GaN Schottky diodes

G. T. Dang, A. P. Zhang, M. M. Mshewa, F. Ren, J. I. Chyi, C. M. Lee, C. C. Chuo, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson, X. A. Cao, S. J. Pearton

Research output: Contribution to journalConference articlepeer-review

22 Scopus citations


High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.

Original languageEnglish
Pages (from-to)1135-1138
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4 I
StatePublished - Jul 2000
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 25 Oct 199929 Oct 1999


Dive into the research topics of 'High breakdown voltage Au/Pt/GaN Schottky diodes'. Together they form a unique fingerprint.

Cite this