High breakdown voltage Au/Pt/GaN Schottky diodes

G. T. Dang; A. P. Zhang; M. M. Mshewa; F. Ren; J. I. Chyi; C. M. Lee; C. C. Chuo; G. C. Chi; J. Han; S. N.G. Chu; R. G. Wilson; X. A. Cao; S. J. Pearton

doi:10.1116/1.582312

High breakdown voltage Au/Pt/GaN Schottky diodes

G. T. Dang, A. P. Zhang, M. M. Mshewa, F. Ren, J. I. Chyi, C. M. Lee, C. C. Chuo, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson, X. A. Cao, S. J. Pearton

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm^-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.

Original language	English
Pages (from-to)	1135-1138
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582312
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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title = "High breakdown voltage Au/Pt/GaN Schottky diodes",

abstract = "High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.",

author = "Dang, {G. T.} and Zhang, {A. P.} and Mshewa, {M. M.} and F. Ren and Chyi, {J. I.} and Lee, {C. M.} and Chuo, {C. C.} and Chi, {G. C.} and J. Han and Chu, {S. N.G.} and Wilson, {R. G.} and Cao, {X. A.} and Pearton, {S. J.}",

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volume = "18",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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TY - JOUR

T1 - High breakdown voltage Au/Pt/GaN Schottky diodes

AU - Dang, G. T.

AU - Zhang, A. P.

AU - Mshewa, M. M.

AU - Ren, F.

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Chi, G. C.

AU - Han, J.

AU - Chu, S. N.G.

AU - Wilson, R. G.

AU - Cao, X. A.

AU - Pearton, S. J.

PY - 2000/7

Y1 - 2000/7

N2 - High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.

AB - High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.

UR - http://www.scopus.com/inward/record.url?scp=0034227698&partnerID=8YFLogxK

U2 - 10.1116/1.582312

DO - 10.1116/1.582312

M3 - 會議論文

AN - SCOPUS:0034227698

SN - 0734-2101

VL - 18

SP - 1135

EP - 1138

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

High breakdown voltage Au/Pt/GaN Schottky diodes

Abstract

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