High-breakdown voltage Au/Pt/GaN diode rectifiers were fabricated on epilayers grown by metallorganic chemical vapor deposition. Reverse breakdown voltages of 550 and >2000 V were demonstrated with vertically depleting structures and lateral devices respectively. Figures-of-merit in the range 4.2 to 4.8 MW/cm-2 were also achieved. Reverse leakage currents and forward on-voltages still exceeded theoretical minimum values, but were nevertheless comparable to SiC Schottky rectifiers.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Issue number||4 I|
|State||Published - Jul 2000|
|Event||46th National Symposium of the American Vacuum Society - Seatlle, WA, USA|
Duration: 25 Oct 1999 → 29 Oct 1999