High breakdown voltage and low thermal effect micromachined AlGaN/GaN HEMTs

Keyphrases

• GaN HEMT 100%
• Thermal Effect 100%
• High Breakdown Voltage 100%
• Micromachining 100%
• AlGaN-GaN 33%
• High Electron Mobility Transistor 33%
• Measurement Results 33%
• High Current 33%
• Silica 33%
• Si Substrate 33%
• Insulator 33%
• Breakdown Voltage 33%
• Self-heating 33%
• Removal Methods 33%
• Substrate Removal 33%
• Thermally Stable 33%
• Transition Layer 33%
• Low Frequency Noise Measurements 33%
• Transfer Technology 33%
• Copper Layer 33%
• Trap Density 33%
• Substrate Transfer 33%
• Chip Package 33%

Engineering

• Breakdown Voltage 100%
• Thermal Effect 100%
• Si Substrate 50%
• Frequency Noise 50%
• Micro Machining 50%
• Silicon Dioxide 50%