HF/H2 O2 etching for removal of damage layer on as-transferred Si layer formed by ion-cut process

C. C. Ho, C. H. Huang, B. S. Chen, Y. H. Su, K. J. Chen, C. S. Hsu, T. H. Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-transfer process, a spongy damage layer with microvoids was formed on the transferred layer because of hydrogen blistering. The surface-to-volume ratio of the damage layer was greater than that of the layer where blistering did not occur. Therefore, the damage layer was selectively etched by an HF/ H2 O2 mixture and completely removed (the etching rates of Si at 70°C for the bulk layer and damage layer were 0.45 and 13.8 nm/min, respectively). Consequently, a smooth, damage-free Si layer (root-mean-square roughness=2.74 nm) was obtained.

Original languageEnglish
Pages (from-to)H227-H229
JournalElectrochemical and Solid-State Letters
Volume13
Issue number7
DOIs
StatePublished - 2010

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