Heterogeneously integrated InP based evanescently-coupled high-speed and high-power p-i-n photodiodes on silicon-on-insulator (SOI) substrate

Jared Hulme, M. J. Kennedy, Rui Lin Chao, Tin Komljenovic, Jin Wei Shi, J. E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We demonstrate InP based evanescently-coupled p-i-n photodiodes heterogeneously integrated onto silicon-on-insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).

Original languageEnglish
Title of host publication2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages233-236
Number of pages4
ISBN (Electronic)9781509016020
DOIs
StatePublished - 19 Dec 2016
Event2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016 - Long Beach, United States
Duration: 31 Oct 20163 Nov 2016

Publication series

Name2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016

Conference

Conference2016 IEEE International Topical Meeting on Microwave Photonics, MWP 2016
Country/TerritoryUnited States
CityLong Beach
Period31/10/163/11/16

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