Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition

Tung Po Hsieh, Hsiang Szu Chang, Wen Yen Chen, Wen Hao Chang, Tzu Min Hsu, Nien Tze Yeh, Wen Jeng Ho, Pei Chin Chiu, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 106 cm -2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.

Original languageEnglish
Pages (from-to)512-515
Number of pages4
JournalNanotechnology
Volume17
Issue number2
DOIs
StatePublished - 28 Jan 2006

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