Growth of high-quality relaxed SiGe films with an intermediate Si_1-yC_y layer for strained Si n-MOSFETs

Engineering & Materials Science

• Relaxation 100%
• Dislocations (crystals) 56%
• Ultrahigh vacuum 56%
• Electron mobility 56%
• Point defects 55%
• Heterojunctions 46%
• Drain current 45%
• Oxide semiconductors 42%
• Chemical vapor deposition 41%
• Atoms 37%
• Tensile stress 35%
• Transistors 30%
• Surface roughness 29%
• Substrates 25%
• Metals 22%

Chemical Compounds

• Threading Dislocation 67%
• Misfit Dislocation 65%
• Drain Current 55%
• Liquid Film 51%
• Crystal Point Defect 46%
• Electron Mobility 42%
• Surface Roughness 35%
• Chemical Vapour Deposition 32%
• Vacuum 28%
• Strain 25%
• Buffer Solution 23%
• Surface 11%

Physics & Astronomy

• field effect transistors 84%
• control equipment 16%
• electron mobility 13%
• tensile stress 13%
• metal oxide semiconductors 13%
• ultrahigh vacuum 13%
• point defects 12%
• surface roughness 11%
• buffers 11%
• transistors 10%
• vapor deposition 10%
• high speed 10%
• propagation 7%
• atoms 6%