Growth of graphene on 6H-SiC by molecular dynamics simulation

N. Jakse, R. Arifin, S. K. Lai

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy.

Original languageEnglish
Article numberart43802
JournalCondensed Matter Physics
Issue number4
StatePublished - 2011


  • Epitaxial growth
  • Graphene
  • Molecular dynamics


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