Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition

Hsien Yu Lin, Hsueh Hsing Liu, Chen Zi Liao, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper reports a novel selective growth method for growing crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by adding SiO 2 stripes in perpendicular to the V-grooves on Si. This method can effectively reduce the thermal stress between GaN and Si substrate so that crack-free (1-101) GaN films as thick as 1 μm is achieved after coalescence even without an AlN interlayer. Cathodoluminescence measurements show the presence of low dislocation density areas, which can be attributed to the bending of dislocations toward to the [1-100] and [11-20] directions during the facet growth.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VI
DOIs
StatePublished - 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: 24 Jan 201127 Jan 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7939
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VI
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/01/1127/01/11

Keywords

  • GaN
  • selective growth
  • semi-polar
  • Si

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