Growth of bent carbon nanotubes by in-situ control of cantilever bending

I. Chen Chen; Ping Jung Wu; Pei Yi Lin; Yu Cian Wang; Yen Hsun Chen

doi:10.1016/j.carbon.2011.03.001

Growth of bent carbon nanotubes by in-situ control of cantilever bending

I. Chen Chen, Ping Jung Wu, Pei Yi Lin, Yu Cian Wang, Yen Hsun Chen

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new and simple method for in-situ control of the growth direction of carbon nanotubes (CNTs) on cantilevers has been developed using plasma enhanced chemical vapor deposition (PECVD). Plasma-induced surface stresses in PECVD processes tend to cause bending of the cantilevers, which significantly changes the electric field distribution near the free-end of the cantilever. By adjusting the flow ratio of the feed gases during CNT growth, the degree of cantilever bending can be controlled due to the change in the plasma-induced surface stress, and in doing so manipulating the field line direction, as well as the growth direction of CNTs. Combining this in-situ tunable CNT growth technique with electron beam induced deposition of catalyst patterns, we have fabricated a bent CNT on a cantilever in one single, continuous deposition run.

Original language	English
Pages (from-to)	2760-2765
Number of pages	6
Journal	Carbon
Volume	49
Issue number	8
DOIs	https://doi.org/10.1016/j.carbon.2011.03.001
State	Published - Jul 2011

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title = "Growth of bent carbon nanotubes by in-situ control of cantilever bending",

abstract = "A new and simple method for in-situ control of the growth direction of carbon nanotubes (CNTs) on cantilevers has been developed using plasma enhanced chemical vapor deposition (PECVD). Plasma-induced surface stresses in PECVD processes tend to cause bending of the cantilevers, which significantly changes the electric field distribution near the free-end of the cantilever. By adjusting the flow ratio of the feed gases during CNT growth, the degree of cantilever bending can be controlled due to the change in the plasma-induced surface stress, and in doing so manipulating the field line direction, as well as the growth direction of CNTs. Combining this in-situ tunable CNT growth technique with electron beam induced deposition of catalyst patterns, we have fabricated a bent CNT on a cantilever in one single, continuous deposition run.",

author = "Chen, {I. Chen} and Wu, {Ping Jung} and Lin, {Pei Yi} and Wang, {Yu Cian} and Chen, {Yen Hsun}",

note = "Funding Information: This research was supported by National Science Council of Taiwan under Grant Nos. 98-2221-E-008-015 and 99-2120-M-008-003 .",

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AU - Wu, Ping Jung

AU - Lin, Pei Yi

AU - Wang, Yu Cian

AU - Chen, Yen Hsun

N1 - Funding Information: This research was supported by National Science Council of Taiwan under Grant Nos. 98-2221-E-008-015 and 99-2120-M-008-003 .

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AB - A new and simple method for in-situ control of the growth direction of carbon nanotubes (CNTs) on cantilevers has been developed using plasma enhanced chemical vapor deposition (PECVD). Plasma-induced surface stresses in PECVD processes tend to cause bending of the cantilevers, which significantly changes the electric field distribution near the free-end of the cantilever. By adjusting the flow ratio of the feed gases during CNT growth, the degree of cantilever bending can be controlled due to the change in the plasma-induced surface stress, and in doing so manipulating the field line direction, as well as the growth direction of CNTs. Combining this in-situ tunable CNT growth technique with electron beam induced deposition of catalyst patterns, we have fabricated a bent CNT on a cantilever in one single, continuous deposition run.

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Growth of bent carbon nanotubes by in-situ control of cantilever bending

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