Growth mechanism of a ternary (Cu,Ni) 6Sn 5 compound at the Sn(Cu)/Ni(P) interface

T. S. Huang, H. W. Tseng, C. T. Lu, Y. H. Hsiao, Y. C. Chuang, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The growth mechanism of an interfacial (Cu,Ni) 6Sn 5 compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni) 6Sn 5 compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni) 6Sn 5 compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni) 6Sn 5 layer could be Cu diffusion in the Sn(Cu) solder matrix.

Original languageEnglish
Pages (from-to)2382-2386
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number11
DOIs
StatePublished - Nov 2010

Keywords

  • Activation energy
  • Sn(Cu) solder

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