Growth and device performance of GaN schottky rectifiers

Jen Inn Chyi, C. M. Lee, C. C. Chuo, G. C. Chi, G. T. Dang, A. P. Zhang, Fan Ren, X. A. Cao, S. J. Pearton, S. N.G. Chu, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

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Undoped, 4μm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356V) Schottky diode rectifiers. The figure of merit VRB2/RON where VRB is the reverse breakdown voltage and RON is the on-resistance, was ∼ 4.53 MW-cm-2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
StatePublished - 1999


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