Growth and characterization of high power AlInN/GaN HEMTs

J. I. Chyi; G. Y. Lee; P. T. Tu; N. T. Yeh

doi:10.1149/06104.0003ecst

Growth and characterization of high power AlInN/GaN HEMTs

J. I. Chyi, G. Y. Lee, P. T. Tu, N. T. Yeh

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (V_B) and on-state resistance (R_on).

Original language	English
Pages (from-to)	3-8
Number of pages	6
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0003ecst
State	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: 11 May 2014 → 15 May 2014

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title = "Growth and characterization of high power AlInN/GaN HEMTs",

abstract = "In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).",

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AU - Chyi, J. I.

AU - Lee, G. Y.

AU - Tu, P. T.

AU - Yeh, N. T.

PY - 2014

Y1 - 2014

N2 - In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).

AB - In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).

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U2 - 10.1149/06104.0003ecst

DO - 10.1149/06104.0003ecst

M3 - 會議論文

AN - SCOPUS:84925143781

SN - 1938-5862

VL - 61

SP - 3

EP - 8

JO - ECS Transactions

JF - ECS Transactions

IS - 4

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Growth and characterization of high power AlInN/GaN HEMTs

Abstract

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