Growth and characterization of high power AlInN/GaN HEMTs

J. I. Chyi, G. Y. Lee, P. T. Tu, N. T. Yeh

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (VB) and on-state resistance (Ron).

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalECS Transactions
Issue number4
StatePublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 11 May 201415 May 2014


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