Growth and characterization of crack-free semipolar {1-101} InGaNGaN multiple-quantum well on V-grooved (001)Si substrates

Guan Ting Chen, Shih Pang Chang, Jen Inn Chyi, Mao Nan Chang

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16 Scopus citations

Abstract

This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and leads to a semipolar surface with the {1-101}GaN facets. GaN films with thickness of over 1 μm can be obtained without cracks by this two stage-growth. Excitation-power-dependent and time-resolved photoluminescence measurements confirm that the internal electric field in the InGaNGaN multiple-quantum well (MQW) grown on this GaN template is indeed smaller than that of the MQW grown on (0001)GaN.

Original languageEnglish
Article number241904
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
StatePublished - 2008

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