@inproceedings{5757ac545ae64b768a05c51001280101,
title = "Germanium antimony sulphide nano wires fabricated by chemical vapour deposition and e-beam lithography",
abstract = "Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO2-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase-change memory applications.",
keywords = "Chemical vapour deposition, Germanium antimony sulphide, Nano wires, Phase-change memory, e-beam lithography",
author = "Huang, {C. C.} and Tai, {Chao Yi} and Liu, {C. J.} and Simpson, {R. E.} and K. Knight and Hewak, {D. W.}",
year = "2008",
language = "???core.languages.en_GB???",
isbn = "9781420085075",
series = "Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008",
pages = "96--99",
booktitle = "Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008",
note = "null ; Conference date: 01-06-2008 Through 05-06-2008",
}