Germanium antimony sulphide nano wires fabricated by chemical vapour deposition and e-beam lithography

C. C. Huang, Chao Yi Tai, C. J. Liu, R. E. Simpson, K. Knight, D. W. Hewak

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO2-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase-change memory applications.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Pages96-99
Number of pages4
StatePublished - 2008
Event2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
Duration: 1 Jun 20085 Jun 2008

Publication series

NameTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
Volume3

Conference

Conference2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
Country/TerritoryUnited States
CityQuebec City, QC
Period1/06/085/06/08

Keywords

  • Chemical vapour deposition
  • Germanium antimony sulphide
  • Nano wires
  • Phase-change memory
  • e-beam lithography

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